PART |
Description |
Maker |
FQPF10N20L |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6.8A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 6.8AI(四)|20F 200V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m N-Channel MOSFET 200V, 18A, 0.14楼? N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
STY100NS20FD 7739 |
N-CHANNEL Power MOSFET N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET From old datasheet system N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRF630S 6059 |
From old datasheet system N - CHANNEL 200V - 0.35 -9A-D 2 PAK MESH OVERLAY TM MOSFET N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series From old datasheet system 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
FQA32N20C |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFL210 IRFL210TR |
200V Single N-Channel HEXFET Power MOSFET in a SOT-223 package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
|
International Rectifier
|
IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
FQP10N20C FQPF10N20C |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
Fairchild Semiconductor
|